System for thin film deposition utilizing compensating forces
US7572686B2 · kind B2 · utility
60Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Oct 9, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.