Semiconductor device and manufacturing method thereof
US7572719B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 2005 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided. The method includes: sequentially forming an oxide layer and a nitride layer on a substrate having a gate insulating layer and a gate formed in the order named thereon; forming a spacer at both sidewalls of the gate by etching the nitride layer; forming a source region and a drain region at both sides of the spacer in the substrate; removing the oxide layer formed on the gate and the substrate; partially removing surfaces of the gate, the source region and the drain region from which the oxide layer is removed; and depositing and thermally annealing a metal layer on the surfaces of the gate, source and drain whose surfaces are partially removed, to form a salicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.