Blanket resist to protect active side of semiconductor

US7572735B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Scott Cuong Nguyen · Garland, US
• Keith David Fenstermacher · Sachse, US
• David Michael Smith · Plano, US
• Courtney Michael Hazelton · Richardson, US

Key dates

• Filing date: Sep 27, 2006
• Grant date: Aug 11, 2009
• Expiry date: Dec 27, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0209
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Yield loss in semiconductor processing is mitigated by forming a resist over an active side of a semiconductor workpiece or wafer, as well as around the edge of the wafer. The resist mitigates the creation of contaminants, such as nitride flakes, for example, that can develop when an oxide, nitride, oxide (ONO) layer is removed from the back or in-active side of the wafer. In the absence of the resist, such flakes may migrate to the front or active side of the wafer and cause defects to form therein, which can result in yield loss.