Methods for optimizing thin film formation with reactive gases
US7572740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2008 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Apr 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.