Patent · US Active

Plasmon wave propagation devices and methods

US7573045B2 · kind B2 · utility

17Cited by
199References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 15, 2007
Grant dateAug 11, 2009
Priority date
Expiry dateJan 7, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J25/00
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Nanoantennas are formed on a substrate (e.g., silicon) and generate light via interactions with a charged particle beam, where the frequency of the generated light is based in large part on the periodicity of the “fingers” that make up the nanoantennas. Each finger has typical dimensions of less than 100 nm on the shorter side and typically less than 500 nm on the longer, but the size of the optimal longer side is determined by the electron velocity. The charged particle may be an electron beam or any other source of charged particles. By utilizing fine-line lithography on the surface of the substrate, the nanoantennas can be formed without the need for complicated silicon devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.