Random number generating element
US7573094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Aug 7, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F7/588
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Random number generating element comprises source region, drain region, semiconductor channel provided between source region and drain region and having portion of width W and length L, width W and length L satisfying W≦(π/10(μm2))/L, tunnel insulation film provided on semiconductor channel, and conductive fine particle group containing conductive fine particles provided on tunnel insulation film with surface density not less than 2.5×1011 cm−2, charge and discharge of electrons generating between conductive fine particles and semiconductor channel via tunnel insulation film, wherein following inequalities are satisfied:LWDdot≧[RTunnel/RTunnel(Tox=0.8 nm)]0.3 nm/T×exp[0.3 nm×(0.8 nm/T)×(4π(2m×3.1 eV)1/2/h)],(q/4π∈T)≦26meV,[Ddot×d4/3/(W×L1/2)]×[RTunnel/RTunnel(Tox=0.8 nm)]−2/3≧8000×21/2(μm−13/6)where Ddot represents surface density, d average diameter, T thickness, Rtunnel tunnel resistance per unit area, Rtunnel (Tox=0.8 nm) tunnel resistance, per unit area, of tunnel oxide film with thickness of 0.8 nm, h Plank's constant, q elemental charge, m effective mass, and ∈ dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.