Magnetoelectric device and method for writing non-volatile information into said magnetoelectric device
US7573734B2 · kind B2 · utility
8Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Jul 13, 2007 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Oct 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention relates to a device comprising at least a first ferromagnetic layer (202) and an element (204) exchange-bias coupled to this layer in at least one place through an interface (208), for controlling the magnetic state of the ferromagnetic layer (202) in the coupling place with an electrical field applied at least on the element, the element comprising a material with clamped antiferromagnetic and ferroelectric characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.