Nitride semiconductor laser device
US7573924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Dec 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most −30° C. and an oxygen concentration of at most 100 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.