Semiconductor laser having a doped active layer
US7573925B1 · kind B1 · utility
1Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | May 15, 2007 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | May 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor lasers having a doped active region. In one example embodiment, a laser includes a substrate and a doped active region positioned above the substrate. The doped active region includes a plurality of quantum wells separated by a plurality of barrier layers. The quantum wells and the barrier layers are doped with a doping material with a concentration between about 1*10^16/cm3 to about 1*10^17/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.