TI and W containing transparent oxide electrode film
US7575698B2 · kind B2 · utility
6Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2008 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Dec 30, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A transparent oxide electrode film is provided to have crystalline indium oxide as its main component in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resistivity of the transparent oxide electrode film is 5.7×10−4 Ωcm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.