Quantum dot laser diode and method of manufacturing the same
US7575943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Jan 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.