Ballistic deflection transistor and logic circuits based on same
US7576353B2 · kind B2 · utility
21Cited by
1References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Dec 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum well is formed in a substrate to define a hub, ports extending from the hub, and a deflective structure in the hub. Electrons move through the hub and ports according to the ballistic electron effect. Gates control the movement of the electrons, causing them to be incident on the deflective structure on one side or the other, thus controlling the direction in which they are deflected and the port through which they pass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.