System and method for reading multiple magnetic tunnel junctions with a single select transistor
US7577020B2 · kind B2 · utility
12Cited by
2References
24Claims
0Family size
Inventors
Key dates
| Filing date | Oct 1, 2007 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Mar 28, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reading two or more magnetic tunnel junctions (MTJs) which are serially connected with a select transistor to form a memory string, the method comprises turning on the select transistor, measuring a first resistance of the memory string, storing the first resistance, toggling a predetermined one of the MTJs, measuring a second resistance of the memory string after the toggling, toggling back the predetermined one of the MTJs and comparing the first and second resistances with a plurality of predetermined resistance values, wherein the comparison result leads to a determination of the data stored in the MTJs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.