Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage
US7577022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2005 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Jan 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electric element includes: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.