Wavelength conversion layers with embedded crystallites
US7577318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2005 |
| Grant date | Aug 18, 2009 |
| Priority date | — |
| Expiry date | Dec 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a wavelength conversion layer (1) with a matrix layer (2) comprising embedded rare-earth-ion-doped micro-crystallites (3) and/or rare-earth-ion-doped amorphous particles, wherein said rare-earth-ion-doped micro crystallites and/or rare-earth-ion-doped amorphous particles are doped with at least one of the lanthanides, and wherein said rare-earth-ion-doped micro-crystallites and/or said doped amorphous particles have a mean diameter d50 of 10 nm to 500 müm, and wherein the matrix layer, is transparent, whereby the refractive indices of said rare-earth-ion-doped micro-crystallites and/or said rare-earth-ion-doped amorphous particles match the refractive indices of the matrix layer with an index fifference delta n such as: 0<_delta n<_0.1, for at least one wavelength in the range of 400 nm to 1200 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.