Method for removing contaminants from silicon wafer surface
US7578890B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 24, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | May 24, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/46
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.