Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer
US7579263B2 · kind B2 · utility
10Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Sep 8, 2004 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Nov 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the interface layer to a material comprising a semiconductor material. The plurality of seed pads, having an average width of about 1 nm to 10 nm, are interspersed within the interface layer and contact the substrate. An epitaxial layer is then formed by lateral growth of the seed pads over the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.