Carbon nanotube resonator transistor and method of making same
US7579618B2 · kind B2 · utility
12Cited by
2References
32Claims
0Family size
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Key dates
| Filing date | Mar 2, 2005 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | May 23, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.