Semiconductor on insulator structure made using radiation annealing
US7579654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2007 |
| Grant date | Aug 25, 2009 |
| Priority date | — |
| Expiry date | Jun 11, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.