Antireflective film and exposure method
US7582411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An antireflective film is provided between a resist layer and a silicon oxide layer formed on a surface of a silicon substrate, for exposure of the resist layer in an exposure system having a wavelength of 190 nm to 195 nm and a numerical aperture NA of 0.93 to 1.2. Assuming that the complex refractive indexes of upper and lower layers constituting the antireflective film are N1 (=n1−k1i) and N2 (=n2−k2i), respectively, and the thicknesses of both layers are d1 and d2, when a predetermined combination of values of [n10, k10, d10, n20, k20, d20] is selected, n1, k1, d1, n2, k2, and d2 satisfy the relational expression{(n1−n10)/(n1m−n10)}2+{(k1−k10)/(k1m−k10)}2+{(d1−d10)/(d1m−d10)}2+{(n2−n20)/(n2m−n20)}2+{(k2−k20)/(k2m−k20)}2+{(d2−d20)/(d2m−d20)}2≦1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.