Photo sensor and a method for manufacturing thereof
US7582499B2 · kind B2 · utility
0Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2008 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | May 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1662
Abstract
A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.