Precursor containing copper indium and gallium for selenide (sulfide) compound formation
US7582506B2 · kind B2 · utility
7Cited by
13References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 8, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.