Monolithic active pixel dosimeter

US7582875B2 · kind B2 · utility

Assignees

• Universitaet Karlsruhe · DE
• Akademia Gomiczo-Hutnicza · PL
• UNIVERSITE LOUIS PASTEUR · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• Institute of Electron Technology · PL
• FONDAZIONE PER ADROTERAPIA ONCOLOGICA—TERA · IT
• UNIVERSITE DE GENEVE · CH
• Instytut Fizyki Jadrowej Im H Niewodniczanskiego · PL
• Massimo Caccia · IT
• Leopoldo Conte · IT

Inventors

• Massimo Caccia · Como, IT
• Leopoldo Conte · Varese, IT
• Mario Alemi · Como, IT
• Chiara Cappellini · Como, IT
• Antonello Luigi Airoldi · Merate, IT
• Carla Bianchi · Varese, IT
• Raffaele Novario · Varese, IT
• Wim De Boer · Karlsruhe, DE
• Eugene Grigoriev · Karlsruhe, DE
• Halina Niemiec · Lapeer, US
• Wojciech Kucewicz · Lapeer, US
• Francesco Cannillo · Munich, DE
• Gilles Clauss · Strasbourg, FR
• Claude Colledani · Strasbourg, FR
• Grzegorz W. Deptuch · Forest Park, US
• Wojciech Dulinski · Strasbourg, FR
• Piotr Grabiec · Warszawa, PL
• Jacek Marczewski · Warszawa, PL
• Krzysztof Domanski · Munich, DE
• Bohdan Jaroszewicz · Warszawa, PL
• Krzysztof Kucharski · Warszawa, PL
• Laura Badano · Milano, IT
• Omella Ferrando · Milano, IT
• Georg Popowski · Geneva, CH
• Agnieszka Zalewska · Lapeer, US
• Adam Czermak · Lapeer, US

Key dates

• Filing date: May 5, 2005
• Grant date: Sep 1, 2009
• Expiry date: Feb 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.