Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon

US7582891B2 · kind B2 · utility

Assignee

• Arizona Board of Regents, A Corporate Body Organized Under Arizona Law, Acting on Behalf of Arizona State University · US

Inventors

• John Kouvetakis · Mesa, US
• Jose Menendez · Caracas, VE
• John Tolle · Gilbert, US
• Ling Liao · Santa Clara, US
• Dean Samara-Rubio · Pleasanton, US

Key dates

• Filing date: Sep 16, 2005
• Grant date: Sep 1, 2009
• Expiry date: Sep 16, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.