Semiconductor device comprising metal insulator metal (MIM) capacitor
US7582901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Feb 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.