Nitride semiconductor device and manufacturing method thereof
US7582908B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 26, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jul 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.