Semiconductor device

US7582922B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventor

• Wolfgang Werner · Hersbruck, DE

Key dates

• Filing date: Nov 26, 2007
• Grant date: Sep 1, 2009
• Expiry date: Jan 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A semiconductor device is disclosed. One embodiment provides a top surface. A first lateral semiconductor region is arranged adjacent to the top surface and includes a transistor structure. The transistor structure includes a drain zone of a first conductivity type. A second lateral semiconductor region is arranged below the first semiconductor region and includes a junction field-effect transistor structure. The junction field-effect transistor structure includes a source zone of the first conductivity type which is electrically connected to the drain zone of the transistor structure.