Silicon carbide semiconductor device and method for manufacturing the same
US7582932B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Dec 5, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate having a silicon carbide substrate, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; a trench penetrating the second and the third semiconductor layers to reach the first semiconductor layer; a channel layer on a sidewall and a bottom of the trench; an oxide film on the channel layer; a gate electrode on the oxide film; a first electrode connecting to the third semiconductor layer; and a second electrode connecting to the silicon carbide substrate. A position of a boundary between the first semiconductor layer and the second semiconductor layer is disposed lower than an utmost lowest position of the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.