Semiconductor diode, electronic component and voltage source inverter
US7582939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2004 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jan 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can be switched between a first state and a second state. In comparison to the first state, the second state has a greater on-state resistance and a smaller accumulated charge, and the pn-transition is capable of blocking both in the first state as well as in the second state with at least one predetermined blocking ability. An MOS-controlled diode is hereby obtained in which the transition from the on-state to the blocking state is simplified and is thus not critical with regard to the temporal sequence of the control pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.