Patent · US Active

Piezoelectric element and method for manufacturing piezoelectric element

US7583012B2 · kind B2 · utility

4Cited by
5References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 3, 2006
Grant dateSep 1, 2009
Priority date
Expiry dateAug 17, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49155
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

There is a need for a piezoelectric element capable of improving a productivity and a yield without impairing the piezoelectric characteristic and a method for manufacturing the same. A piezoelectric element is provided with a substrate, a first electrode film disposed on the substrate, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. The piezoelectric film has a laminated structure composed of a plurality of crystallized piezoelectric thin films. The piezoelectric film having a predetermined thickness is formed by repeated cycles of a film formation step of forming a piezoelectric thin film and a crystallization heat treatment step of heat-treating the piezoelectric thin film to effect crystallization. In this manner, a piezoelectric film exhibiting uniform crystallinity in the film thickness direction may be produced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.