Semiconductor conductive layers
US7583715B2 · kind B2 · utility
12Cited by
3References
60Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2005 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jun 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Structures and methods for electronic devices with improved conductive regions are provided. The conductive region may include digital alloy superlattice structures, which allow higher doping levels to be achieved than for a bulk (random) alloy with the same average composition. Furthermore, the superlattice structures may improve the resistivity of the region, improving the current spreading of the region and hence the electronic properties of electronic devices such as optoelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.