Critical current density in Nb3Sn superconducting wire

US7585377B2 · kind B2 · utility

Assignee

• Oxford Superconducting Technology · US

Inventors

• Michael Field · Jersey City, US
• Jeff Parrell · Roselle Park, US
• Youzhu Zhang · East Brunswick Township, US
• Seungok Hong · New Providence, US

Key dates

• Filing date: Mar 4, 2008
• Grant date: Sep 8, 2009
• Expiry date: Mar 28, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49117

Abstract

Critical current densities of internal tin wire having values of at least 2000 A/mm2 at temperature of 4.2 K and in magnetic field of 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; and barrier thickness relative to the filament thickness; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.