Lithographic mask and manufacturing method thereof
US7585418B2 · kind B2 · utility
1Cited by
1References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Jul 31, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/82
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Cleaning is carried out by using a sulfuric acid type detergent at a resist stripping and cleaning step (step 5) in a semitranslucent portion forming process and a resist stripping and cleaning step (step 10) in a shielding band forming process, and a sulfuric acid removing step of partially or wholly removing a surface layer portion in a pattern into which a sulfate ion is adsorbed is then carried out to effectively remove the adsorbed sulfate ion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.