Thin-film transistor, method of producing thin-film transistor, electronic circuit, display, and electronic device
US7585697B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | May 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.