Light emission from semiconductor integrated circuits
US7586115B2 · kind B2 · utility
0Cited by
13References
36Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Jul 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/00
Abstract
Structures and methods to inject electrons into an insulator from a semiconductor layer that are then collected in a thin layer of a direct semiconductor material which in turn emits light by bandgap recombination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.