Detecting plasmons using a metallurgical junction
US7586167B2 · kind B2 · utility
24Cited by
199References
10Claims
0Family size
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Key dates
| Filing date | May 5, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
Abstract
A sensor device includes a substrate having first and second regions of first and second conductivity types, respectively. A junction having a band-gap is formed between the first and second regions. A plasmon source generates plasmons having fields. At least a portion of the plasmon source is formed near the junction, and the fields reduce the band-gap to enable a current to flow through the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.