Patent · US Active

Semiconductor device

US7586195B2 · kind B2 · utility

2Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 2, 2006
Grant dateSep 8, 2009
Priority date
Expiry dateAug 28, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An electronic component for microwave transmission includes a high resistivity substrate on which is at least located several metallization layers divided into portions. A first set of piled up portions defines a ground ribbon and a second set of piled up portions defines a power ribbon. At least a first active portion of said ground ribbon and a first active portion of said power ribbon are respectively located between the substrate and an uppermost one of the several metallization layers. The electronic component in one implementation is a coplanar waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.