Magneto-resistance effect element and magnetic memory device
US7586781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2005 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Feb 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction single magnetic domain wall movement phenomenon are achieved.A magneto-resistance effect element is formed by including at least: a magnet wire 1 for forming magnetic domain wall potential 7 binding a single magnetic domain wall 2; a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall 2 into the magnet wire 1; and a drive current applying means for applying the current 3 including a resonance frequency component determined on the basis of the magnetic domain wall potential 7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.