Metal film production apparatus
US7588799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Mar 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.