Method for producing a semiconductor element

US7588998B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Stephan Kaiser · Regensburg, DE
• Frank Otte · Mount Prospect, US
• Andreas Plössl · Regensburg, DE

Key dates

• Filing date: Jan 30, 2003
• Grant date: Sep 15, 2009
• Expiry date: Oct 1, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.