Patent · US Active

Image sensor with buried self aligned focusing element

US7589306B2 · kind B2 · utility

5Cited by
10References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 12, 2008
Grant dateSep 15, 2009
Priority date
Expiry dateFeb 12, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8067

Abstract

An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.