Semiconductor device and method of producing the same
US7589344B2 · kind B2 · utility
12Cited by
1References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Nov 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely used as a phase change region. Therefore, the phase change region is not increased in volume even if the number of times of rewriting is increased. Since the volume of the phase change region is not changed, an electric current level required for rewriting is constant. Thus, the semiconductor device having a memory cell capable of carrying out stable rewriting is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.