Method for forming a liquid crystal display with particular metal layer
US7589807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a liquid crystal display is disclosed. A substrate comprising a thin film transistor area and a pixel area is provided. A gate line, a gate dielectric layer, an active layer and a doped layer are formed overlying the substrate sequentially. A metal layer is formed overlying the doped layer. The metal layer, doped layer and the active layer in the thin film transistor area are defined to form a thin film transistor. The metal layer in the pixel area is defined to form a first metal portion of a first thickness and a second metal portion of a second portion, wherein the first metal portion acts as a contact region, the first thickness exceeds the second thickness, and the second thickness is sufficient to partially reflect and partially transmit incident light to form a transflective region in the pixel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.