Detection method and apparatus metal particulates on semiconductors
US7589834B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 8, 2004 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/94
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of detecting surface particulate defects, and especially metal particulates, in semiconductors such as silicon, to characterise defects likely to have an effect on the electrical activity of such semiconductor materials, comprises exposing the surface of the semiconductor structure in the vicinity of a surface particulate to at least one high-intensity beam of light and collecting and processing the photoluminescence response; and using the result to identify unacceptable contamination levels resulting from diffusion of contaminant from particulate into semiconductor structure. Optionally, the semiconductor is annealed and photoluminescence responses collected before and after annealing to identify contaminant diffusion rates. Apparatus for the same is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.