Semiconductor laser having an improved window layer and method for the same
US7590158B2 · kind B2 · utility
3Cited by
5References
1Claims
0Family size
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Key dates
| Filing date | Jun 22, 2006 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Jul 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.