Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
US7590159B2 · kind B2 · utility
7Cited by
11References
5Claims
0Family size
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Key dates
| Filing date | Jun 7, 2007 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Jun 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.