Electron beam pumped semiconductor laser
US7590161B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2005 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Dec 13, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2201/067
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.