Method for making a photovoltaic cell based on thin-film silicon

US7592198B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Stephanie Huet · Grenoble, FR
• Pierre Juliet · Grenoble, FR
• Cédric Ducros · Bévenais, FR
• Frédéric Sanchette · Montferrat, FR

Key dates

• Filing date: Mar 20, 2006
• Grant date: Sep 22, 2009
• Expiry date: Apr 14, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—) doped amorphous silicon layer (14), in crystallizing, at least partly, the at least one first layer (13) using a technology for crystallizing silicon by pulsed electronic beam.