Fabrication process of a semiconductor device having a capacitor
US7592216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2008 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | May 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.