Method for forming a nitrogen-containing gate insulating film
US7592234B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Aug 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a nitrogen-containing gate insulating film includes the steps of forming a silicon oxide film on a silicon substrate, nitriding the top portion of the silicon oxide film to form a thin silicon nitride layer, and forming a silicon nitride film on the silicon nitride layer by using an atomic layer deposition process, to obtain a gate insulating film having a higher nitrogen concentration, while suppressing the nitrogen concentration in the vicinity of the gate insulating film and the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.